View RF3826PCBA-411_5676788.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 of 15 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bifet hbt rf in pin 2,3 rf out / vds pin 6,7 gnd base vgs pin 1 rf3826 30mhz to 2500mhz, 9w gan wideband power amplifier the rf3826 is a wideband power amplifier designed for cw and pulsed applica- tions such as wireless infrastructure, radar, two way radios and general purpose amplification. using an advanced high power density gallium nitride (gan) semi- conductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. the rf3826 is an input matched gan transistor packaged in an air cavity ceramic package which provides excellent thermal stabilit y through the use of advanced heat sink and power dissipation technologies. ease of integration is accomplished through the incorporation of optimized input matching network within the package that pro- vides wideband gain and power performance in a single amplifier. an external out- put match offers the flexibility of furthe r optimizing power and efficiency for any sub-band within the overall bandwidth. features ? advanced gan hemt technology ? output power of 9w ? advanced heat-sink technology ? 30mhz to 2500mhz instantaneous bandwidth ? input internally matched to 50 ? ? 28v operation typical performance ? p out 39.5dbm ? gain 12db ? power added efficiency 45% (30mhz to 2500mhz) ? power added efficiency 50% (200mhz to 1800mhz) ? -40c to 85c operating temperature ? large signal models available applications ? class ab operation for public mobile radio ? power amplifier stage for commercial wireless infrastructure ? general purpose tx amplification ? test and instrumentation ? civilian and military radar ds120418 ? package: aln leadless chip carrier / so8 rf3826 30mhz to 2500mhz, 9w gan wide- band power amplifier
2 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )5ma operational voltage 32 v rf- input power 34 dbm ruggedness (vswr) 12:1 storage temperature range -55 to +125 c operating temperature range (t c ) -40 to +85 c operating junction temperature (t j )200c human body model class 1b mttf (t j < 200c, 95% confidence limits)* 3e + 06 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 9.8 c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may ca use permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values specified in the table on page two. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2832v gate voltage (v gsq )-5-3-2.5v drain bias current 55 ma rf input power (p in )32dbm input source vswr 10:1 rf performance characteristics frequency range 30 2500 mhz small signal 3db bandwidth linear gain 12 db p out = 30dbm power gain 9 db p 3db gain flatness 1 db p out = 30dbm, 30mhz to 2500mhz gain variation with temperature -0.02 db/c input return loss (s 11 )-10-8db output power (p 3db ) 39.5 dbm 30mhz to 2500mhz power added efficiency (pae) 45 % 30mhz to 2500mhz 50 % 200mhz to 1800mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf functional tests [1], [2] v gs(q) -3 v gain 11 db p in = 20dbm power gain 8.5 db p in = 31dbm input return loss -10 db output power 39 dbm power added efficiency (pae) 40 % [1] test conditions: v dsq = 28v, i dq = 55ma, cw, f = 2000mhz, t = 25oc. [2] performance in a standard tuned test fixture. parameter specification unit condition min. typ. max.
4 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 2500mhz (t = 25c, unless noted) 20 15 10 5 0 5 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 magnitude,s 11 ,s 22 (db) magnitude,s 21 (db) frequency(mhz) smallsignalsparametersversusfrequency (v d =28v,i dq =55ma) s21 s11 s22 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 gain(db) frequency(mhz) gainversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 irl,inputreturnloss(db) frequency(mhz) inputreturnlossversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 20 15 10 5 0 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p out =39dbm (cw,v d =28v,i dq =55ma) gain irl 20 30 40 50 60 70 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p out =39dbm (cw,v d =28v,i dq =55ma)
5 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 2500mhz (t = 25c, unless noted) 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 gain(db) frequency(mhz) gainversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 poweraddedefficiency,pae(%) frequency(mhz) poweraddedefficiencyversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 9 10 11 12 13 14 25 28 31 34 37 40 gain(db) p out ,outputpower(dbm) gainversusoutputpower (cw,v d =28v,i dq =55ma) freq=50mhz freq=1200mhz freq=2000mhz 0 10 20 30 40 50 60 25 28 31 34 37 40 poweraddedefficiency,pae(%) p out ,outputpower(dbm) poweraddedefficiencyversusoutputpower (cw,v d =28v,i dq =55ma) freq=50mhz freq=1200mhz freq=2000mhz 25 20 15 10 5 0 25 28 31 34 37 40 inputreturnloss,irl(db) p out ,outputpower(dbm) inputreturnlossversusoutputpower (cw,v d =28v,i dq =55ma) freq=50mhz freq=1200mhz freq=2000mhz
6 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 2500mhz (t = 25c, unless noted) 60 50 40 30 20 10 0 0.1 1 10 100 intermodulationdistortion(imd dbc) p out ,outputpower(w pep) imdversusoutputpower (v d =28v,i dq =85ma,f1=1199.5mhz,f2=1200.5mhz) imd3 imd3 imd5 imd5 imd7 imd7 70 60 50 40 30 20 10 0 0.1 1 10 100 intermodulationdist ortion(imd dbc) tonespacing(mhz) imdversustonespacing (p out =9wpep,v d =28v,i dq =85ma) imd3 imd3 imd5 imd5 imd7 imd7 f1=1200mhztonespacing/2 f2=1200mhz+tonespacing/2 6 7 8 9 10 11 12 13 14 15 16 15 20 25 30 35 40 gain(db) p out ,outputpower(dbm) gainversusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=1200mhz) 25ma 55ma 85ma 115ma 145ma 50 45 40 35 30 25 20 15 10 0.1 1 10 100 imd3,intermodulationdistortion(dbc) p out ,outputpower(wpep) imd3versusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=1200mhz) 25ma 55ma 85ma 115ma 145ma
7 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 200mhz to 1800mhz (t = 25c, unless noted) 20 15 10 5 0 5 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 magnitude,s 11 ,s 22 (db) magnitude,s 21 (db) frequency(mhz) smallsignalsparametersversusfrequency (v d =28v,i dq =55ma) s21 s11 s22 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 gain(db) frequency(mhz) gainversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 20 30 40 50 60 70 0 200 400 600 800 1000 1200 1400 1600 1800 2000 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 irl,inputreturnloss(db) frequency(mhz) inputreturnlossversusfrequency,p in =30dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 20 15 10 5 0 5 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p out =39dbm (cw,v d =28v,i dq =55ma) gain irl 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 1800 2000 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p out =39dbm (cw,v d =28v,i dq =55ma)
8 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 200mhz to 1800mhz (t = 25c, unless noted) 0 3 6 9 12 15 0 200 400 600 800 1000 1200 1400 1600 1800 2000 gain(db) frequency(mhz) gainversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 1200 1400 1600 1800 2000 poweraddedefficiency,pae(%) frequency(mhz) poweraddedefficiencyversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency (cw,v d =28v,i dq =55ma) pout=39dbm pout=35dbm pout=25dbm p out p out p out 7 8 9 10 11 12 13 14 28 31 34 37 40 43 gain(db) p out ,outputpower(dbm) gainversusoutputpower (cw,v d =28v,i dq =55ma) freq=200mhz freq=1000mhz freq=1800mhz
9 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 200mhz to 1800mhz (t = 25c, unless noted) 0 10 20 30 40 50 60 70 28 31 34 37 40 43 poweraddedefficiency,pae(%) p out ,outputpower(dbm) poweraddedefficiencyversusoutputpower (cw,v d =28v,i dq =55ma) freq=200mhz freq=1000mhz freq=1800mhz 25 20 15 10 5 0 28 31 34 37 40 43 inputreturnloss,irl(db) p out ,outputpower(dbm) inputreturnlossversusoutputpower (cw,v d =28v,i dq =55ma) freq=200mhz freq=1000mhz freq=1800mhz 0 5 10 15 20 25 0 102030405060708090100 powerdissipation(w) maximumcasetemperature( c) powerdissipationderatingcurve (basedonmaximumpackagetemperatureandr th )
10 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm.) a123 : trace code 1234 : serial number package style: ceramic so8 pin names and descriptions pin name description 1vgs gate dc bias pin 2rf in rf input 3rf in rf input 4n/c no connect 5n/c no connect 6rf out/vds rf output / drain dc bias pin 7rf out/vds rf output / drain dc bias pin 8n/c no connect pkg base gnd ground
11 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rf3826 evaluation board esd sensitive material. please use proper esd precautions wh en handling devices of evalua tion board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connection rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -5v to vg. 4. apply 28v to vd. 5. increase v g until drain current reaches 55ma or desired bias point. 6. turn on the rf input. typical test data provided is measured to sma connector re ference plane, and include evaluation board / broadband bias network mismatch and losses.
12 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials component value manufacturer part number c1, c2 2400pf dielectric labs inc c08bl242x-5un-x0 c13 100pf panasonic ecj-1vc1h101j c15 10 ? f murata electronics grm21bf51c106ze15l c20 0.9pf atc 100a0r9bt150xt c21, c23 1000pf panasonic ecj-1vb1h102k c25 4.7 ? f murata electronics grm55er72a475ka01l r11 820 ? panasonic erj-3geyj821 r21, r23 390 ? panasonic erj-3geyj391 l11 120nh coilcraft 1008cs-121xjbc l12, l24 1 ? h coilcraft lps3015-102mlb l21 82nh coilcraft 1008cs-820xjlc l23 470nh coilcraft epl2014-271mlb l20* 0 ? panasonic erj-3gey0r00v l20** 1.6nh coilcraft 0906-2 c11 not used - - *30mhz to 2500mhz rf3826pcba-410 **200mhz to 1800 mhz RF3826PCBA-411 l21 c21 c23 c13 l23 l11 c1 c2 r11 c11 l12 l24 r21 r23 l20 vg 1 rfin 2 rfin 3 n/c 4 n/c 5 rfout 6 rfout 7 n/c 8 gnd 9 u1 rf3826 c20 50 microstrip 50 microstrip rf in rf out c15 c25 d v g v
13 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) rf3826pcba-410 (30mhz to 2500mhz) RF3826PCBA-411 (200mhz to 1800mhz) z source ( ? ) z load ( ? )z source ( ? ) z load ( ? ) 30 49.8 - j1.5 41.4 + j4.6 - - 200 49.5 - j2.0 40.1 - j2.1 49.5 - j2.0 40.2 - j1.1 500 47.3 - j4.0 44.5 + j1.3 47.3 - j4.0 44.8 + j3.5 1000 42.3 - j3.1 35.0 - j8.4 42.3 - j3.1 35.6 - j3.5 1500 39.9 + j1.1 28.2 - j4.0 39.9 + j1.1 29.8 + j3.8 1800 40.4 + j3.7 26.4 - j0.8 40.4 + j3.7 28.9 + j8.9 2000 41.0 + j5.0 25.4 + j1.1 - - 2200 41.3 + j7.0 24.5 + j3.1 - - 2500 44.7 + j9.3 22.9 + j6.2 - - note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak powe r performance across the entire frequency bandwidth. p1 p2 p3
14 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/environmental conditions rfmd does not recommend operating this device with typical drai n voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use pr oper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi - mum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency charac teristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational characteristics for this device, con- sidering manufacturing variations and expected performance. th e user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the pack aged device thermal characteristics. this is measured using ir microscopy capturing the device under test temp erature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting th e results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the max- imum of 200c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi- ent to the back of the package including heat sinking syst ems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.
15 of 15 rf3826 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information ordering code description rf3826s2 2-piece sample bag rf3826sb 5-piece bag rf3826sq 25-piece bag rf3826sr 100 pieces on 7? short reel rf3826tr7 750 pieces on 7? reel rf3826pcba-410 fully assembled evaluation board 30mhz to 2500mhz; 28v operation RF3826PCBA-411 fully assembled evaluation board 200mhz to 1800mhz; 28v operation

▲Up To Search▲

Price & Availability of RF3826PCBA-411

	To Download RF3826PCBA-411 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .